Ubushobozi-Bwinshi bwa Filime Capacitor Snubber kumashini yo gusudira (SMJ-TC)
Amakuru ya tekiniki
Ikigereranyo cy'ubushyuhe | Byinshi. Gukoresha ubushyuhe., Hejuru, max: + 85 temperature Ubushyuhe bwo mu cyiciro cyo hejuru: + 85 temperature Ubushyuhe bwo mu cyiciro cyo hasi: -40 ℃ |
urwego rwubushobozi | 0.22 ~ 3μF |
Ikigereranyo cya voltage | 3000V.DC ~ 10000V.DC |
Cap.tol | ± 5% (J); ± 10% (K) |
Ihangane na voltage | 1.35Kuri DC / 10S |
Impamvu yo gutandukana | tgδ≤0.001 f = 1KHz |
Kurwanya insulation | C≤0.33μF RS≥15000 MΩ (kuri 20 ℃ 100V.DC 60S) C > 0.33μF RS * C≥5000S (kuri 20 ℃ 100V.DC 60S) |
Ihangane imyigaragambyo | reba urupapuro |
Icyizere cyo kubaho | 100000h (Un; Θhotspot≤70 ° C) |
Ibipimo ngenderwaho | IEC 61071; |
Ikiranga
1. kaseti ya Mylar, Ifunze hamwe na resin;
2. Imbuto z'umuringa ziyobora;
3. Kurwanya voltage nyinshi, tgδ nkeya, kuzamuka kwubushyuhe buke;
4. hasi ya ESL na ESR;
5. Impanuka ndende.
Gusaba
1. GTO Snubber.
2. Byakoreshejwe cyane mubikoresho bya elegitoroniki mugihe amashanyarazi ya voltage, gukingira amashanyarazi.
Inzira zisanzwe
Igishushanyo mbonera
Ibisobanuro
Un = 3000V.DC | |||||||
Ubushobozi (μF) | φD (mm) | L (mm) | L1 (mm) | ESL (nH) | dv / dt (V / μS) | Ipk (A) | Irms (A) |
0.22 | 35 | 44 | 52 | 25 | 1100 | 242 | 30 |
0.33 | 43 | 44 | 52 | 25 | 1000 | 330 | 35 |
0.47 | 51 | 44 | 52 | 22 | 850 | 399 | 45 |
0.68 | 61 | 44 | 52 | 22 | 800 | 544 | 55 |
1 | 74 | 44 | 52 | 20 | 700 | 700 | 65 |
1.2 | 80 | 44 | 52 | 20 | 650 | 780 | 75 |
1.5 | 52 | 70 | 84 | 30 | 600 | 900 | 45 |
2.0 | 60 | 70 | 84 | 30 | 500 | 1000 | 55 |
3.0 | 73 | 70 | 84 | 30 | 400 | 1200 | 65 |
4.0 | 83 | 70 | 84 | 30 | 350 | 1400 | 70 |
Un = 6000V.DC | |||||||
Ubushobozi (μF) | φD (mm) | L (mm) | L1 (mm) | ESL (nH) | dv / dt (V / μS) | Ipk (A) | Irms (A) |
0.22 | 43 | 60 | 72 | 25 | 1500 | 330 | 35 |
0.33 | 52 | 60 | 72 | 25 | 1200 | 396 | 45 |
0.47 | 62 | 60 | 72 | 25 | 1000 | 470 | 50 |
0.68 | 74 | 60 | 72 | 22 | 900 | 612 | 60 |
1 | 90 | 60 | 72 | 22 | 800 | 900 | 75 |
Un = 7000V.DC | |||||||
Ubushobozi (μF) | φD (mm) | L (mm) | L1 (mm) | ESL (nH) | dv / dt (V / μS) | Ipk (A) | Irms (A) |
0.22 | 45 | 57 | 72 | 25 | 1100 | 242 | 30 |
0.68 | 36 | 80 | 92 | 28 | 1000 | 680 | 25 |
1.0 | 43 | 80 | 92 | 28 | 850 | 850 | 30 |
1.5 | 52 | 80 | 92 | 25 | 800 | 1200 | 35 |
1.8 | 57 | 80 | 92 | 25 | 700 | 1260 | 40 |
2.0 | 60 | 80 | 92 | 23 | 650 | 1300 | 45 |
3.0 | 73 | 80 | 92 | 22 | 500 | 1500 | 50 |
Un = 8000V.DC | |||||||
Ubushobozi (μF) | φD (mm) | L (mm) | L1 (mm) | ESL (nH) | dv / dt (V / μS) | Ipk (A) | Irms (A) |
0.33 | 35 | 90 | 102 | 30 | 1100 | 363 | 25 |
0.47 | 41 | 90 | 102 | 28 | 1000 | 470 | 30 |
0.68 | 49 | 90 | 102 | 28 | 850 | 578 | 35 |
1 | 60 | 90 | 102 | 25 | 800 | 800 | 40 |
1.5 | 72 | 90 | 102 | 25 | 700 | 1050 | 45 |
2.0 | 83 | 90 | 102 | 25 | 650 | 1300 | 50 |
Un = 10000V.DC | |||||||
Ubushobozi (μF) | φD (mm) | L (mm) | L1 (mm) | ESL (nH) | dv / dt (V / μS) | Ipk (A) | Irms (A) |
0.33 | 45 | 114 | 123 | 35 | 1500 | 495 | 30 |
0.47 | 54 | 114 | 123 | 35 | 1300 | 611 | 35 |
0.68 | 65 | 114 | 123 | 35 | 1200 | 816 | 40 |
1 | 78 | 114 | 123 | 30 | 1000 | 1000 | 55 |
1.5 | 95 | 114 | 123 | 30 | 800 | 1200 | 70 |