GTO snubber capacitor mubikoresho bya elegitoroniki

Ibisobanuro bigufi:

Inzira ya Snubber ningirakamaro kuri diode ikoreshwa muguhindura imirongo.Irashobora kubika diode mumashanyarazi arenze urugero, ashobora kuvuka mugihe cyo gukira.

Ohereza imeri kuri twe Kuramo nka PDF

Ibicuruzwa birambuye

Ibicuruzwa

Amakuru ya tekiniki

Ikigereranyo cy'ubushyuhe	Byinshi. Gukoresha ubushyuhe., Hejuru, max: + 85 temperature Ubushyuhe bwo mu cyiciro cyo hejuru: + 85 temperature Ubushyuhe bwo mu cyiciro cyo hasi: -40 ℃
urwego rwubushobozi	0.22 ～ 3μF
Ikigereranyo cya voltage	3000V.DC ～ 10000V.DC
Cap.tol	± 5% (J); ± 10% (K)
Ihangane na voltage	1.35Kuri DC / 10S
Impamvu yo gutandukana	tgδ≤0.001 f = 1KHz
Kurwanya insulation	C≤0.33μF RS≥15000 MΩ (kuri 20 ℃ 100V.DC 60S) C ＞ 0.33μF RS * C≥5000S (kuri 20 ℃ 100V.DC 60S)
Ihangane imyigaragambyo	reba urupapuro
Icyizere cyo kubaho	100000h (Un; Θhotspot≤70 ° C)
Ibipimo ngenderwaho	IEC 61071;

Ikiranga

1. kaseti ya Mylar, Ifunze hamwe na resin;

2. Imbuto z'umuringa ziyobora;

3. Kurwanya voltage nyinshi, tgδ nkeya, kuzamuka kwubushyuhe buke;

4. hasi ya ESL na ESR;

5. Impanuka ndende.

Gusaba

1. GTO Snubber.

2. Byakoreshejwe cyane mubikoresho bya elegitoroniki mugihe amashanyarazi ya voltage, gukingira amashanyarazi.

Inzira zisanzwe

Igishushanyo mbonera

Ibisobanuro

Un = 3000V.DC
Ubushobozi (μF)	φD (mm)	L (mm)	L1 (mm)	ESL (nH)	dv / dt (V / μS)	Ipk (A)	Irms (A)
0.22	35	44	52	25	1100	242	30
0.33	43	44	52	25	1000	330	35
0.47	51	44	52	22	850	399	45
0.68	61	44	52	22	800	544	55
1	74	44	52	20	700	700	65
1.2	80	44	52	20	650	780	75
1.5	52	70	84	30	600	900	45
2.0	60	70	84	30	500	1000	55
3.0	73	70	84	30	400	1200	65
4.0	83	70	84	30	350	1400	70
Un = 6000V.DC
Ubushobozi (μF)	φD (mm)	L (mm)	L1 (mm)	ESL (nH)	dv / dt (V / μS)	Ipk (A)	Irms (A)
0.22	43	60	72	25	1500	330	35
0.33	52	60	72	25	1200	396	45
0.47	62	60	72	25	1000	470	50
0.68	74	60	72	22	900	612	60
1	90	60	72	22	800	900	75

Un = 7000V.DC
Ubushobozi (μF)	φD (mm)	L (mm)	L1 (mm)	ESL (nH)	dv / dt (V / μS)	Ipk (A)	Irms (A)
0.22	45	57	72	25	1100	242	30
0.68	36	80	92	28	1000	680	25
1.0	43	80	92	28	850	850	30
1.5	52	80	92	25	800	1200	35
1.8	57	80	92	25	700	1260	40
2.0	60	80	92	23	650	1300	45
3.0	73	80	92	22	500	1500	50

Un = 8000V.DC
Ubushobozi (μF)	φD (mm)	L (mm)	L1 (mm)	ESL (nH)	dv / dt (V / μS)	Ipk (A)	Irms (A)
0.33	35	90	102	30	1100	363	25
0.47	41	90	102	28	1000	470	30
0.68	49	90	102	28	850	578	35
1	60	90	102	25	800	800	40
1.5	72	90	102	25	700	1050	45
2.0	83	90	102	25	650	1300	50

Un = 10000V.DC
Ubushobozi (μF)	φD (mm)	L (mm)	L1 (mm)	ESL (nH)	dv / dt (V / μS)	Ipk (A)	Irms (A)
0.33	45	114	123	35	1500	495	30
0.47	54	114	123	35	1300	611	35
0.68	65	114	123	35	1200	816	40
1	78	114	123	30	1000	1000	55
1.5	95	114	123	30	800	1200	70